Composition for polishing silicon nitride and method for controlling selectivity using same

Composition de polissage du nitrure de silicium et procede de controle de la selectivite l' utilisant

Zusammensetzung zur reinigung von siliciumnitrid und verfahren zur selektivitätskontrolle damit

Abstract

A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

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Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    EP-1650278-A2April 26, 2006Fujimi IncorporatedComposition for selectively polishing silicon nitride layer and polishing method employing it
    JP-2007150264-AJune 14, 2007Hitachi Chem Co Ltd, 日立化成工業株式会社Organic insulating material, polishing material for copper film compound material, and polishing method
    US-2004203252-A1October 14, 2004Park Hyung SoonCMP slurry for nitride and CMP method using the same
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NO-Patent Citations (1)

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    See also references of WO 2010047314A1

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